Nanya Technology recently disclosed for the first time the progress of its customized AI memory development. The company stated that it is collaborating with multiple logic IC manufacturers and ecosystem partners, and some products have entered the trial production stage. More concrete results are expected to emerge in the second half of this year.

In particular, HBF technology is expected to reduce the total cost of ownership (TCO) while increasing the scalability of AI systems. The industry forecasts that the demand of complex memory solutions, including HBF, will pick up around 2030.

In addition to yield improvements, Samsung Electronics is also significantly increasing its 1c DRAM production capacity.

According to CFM analysis, the global DRAM/NAND Flash market reached $75.51 billion in the fourth quarter of 2025, up 29.2% quarter-over-quarter. The global DRAM market grew 29.8% quarter-over-quarter to $51.97 billion, while the NAND market increased 27.8% quarter-over-quarter to $23.55 billion. For the full year, the global DRAM/NAND Flash market surpassed $200 billion for the first time in history, reaching $221.59 billion, a year-over-year increase of 32.7%.

On February 12, Samsung Electronics announced that it has begun mass production of its industry-leading HBM4 and has shipped commercial products to customers. Samsung’s HBM4 delivers a consistent processing speed of 11.7 gigabits-per-second (Gbps), exceeding the industry standard of 8Gbps by approximately 46% and setting a new benchmark for HBM4 performance. Samsung anticipates that its HBM sales will more than triple in 2026 compared to 2025, and is proactively expanding its HBM4 production capacity. Following the successful launch of HBM4, samples of HBM4E are expected to be released starting in the second half of 2026, while customized HBM samples are scheduled to begin delivery in 2027 according to specific customer specifications.

On February 11(local time), Micron CFO Mark Murphy stated at a semiconductor conference held by Wolfe Research that the company has achieved mass production and commenced customer shipments of HBM4. In response to recent speculation that Micron may be excluded from NVIDIA's HBM4 supply chain, Micron denied expectations that Samsung Electronics and SK Hynix would divide the entire HBM4 supply volume. Murphy further indicated that Micron's HBM4 shipments are steadily increasing in the first quarter of this year, which is one quarter earlier than the timeline projected during the December 2024 earnings call. The company’s entire 2026 HBM production capacity is already sold out. HBM4 production yields are progressing according to plan, while Micron's HBM4 product delivers performance exceeding 11 Gb/s.

Samsung is currently developing zHBM, which centers on stacking HBMs in a 3-D structure, and is expected to bring another major innovation in terms of bandwidth or energy efficiency required in the era of physical AI.

According to South Korean media reports, Samsung Electronics has decided to commence mass production of HBM4 as early as the third week of this month. These products will be used in NVIDIA’s next-generation AI computing platform, "Vera Rubin."

According to reports of South Korean media citing industry insiders, Samsung Electronics plans to start shipping HBM4 chips as early as next week, following the Lunar New Year holiday, for use in graphics processing units (GPUs) made by Nvidia. Nvidia's GPUs are widely used in generative AI systems. Samsung has passed Nvidia's quality certification process and secured purchase orders, noting that the production schedule was finalized to align with Nvidia's launch plans for Vera Rubin.

At a recent "trillion-dollar banquet," NVIDIA CEO Jensen Huang revealed that the company is in full-scale production of its next-generation AI chips, Grace Blackwell and Vera Rubin, and TSMC's production capacity is expected to more than double over the next ten years.

The results significantly exceeded the previous record set in 2024. The annual revenue increased by more than 30 trillion won while the annual operating profit nearly doubled year-on-year, marking the highest annual performance in the company’s history.

Micron broke ground on an advanced wafer fabrication facility located within the company's existing NAND manufacturing complex in Singapore. This new facility represents a planned investment of approximately US $24 billion (SG $31 billion) over 10 years and is designed to ultimately provide 700,000 square feet of cleanroom space.

Samsung recently established a new HBM development roadmap and has notified its suppliers, requesting them to formulate supply plans by March.

Samsung Electronics employs a 4nm process for HBM4 logic dies. The chip development and mass production are handled by the System LSI division and the Foundry division within the Device Solutions (DS) business unit. Furthermore, Samsung has been confirmed to be designing logic chips for custom HBM using a 2nm process.

According to South Korean media reports, informed sources within Samsung Electronics revealed that the yield of Samsung Electronics' 1c DRAM has recently approached 60%. This yield level ensures profitability by exceeding the break-even point.