According to South Korean media, driven by the surging demand for high-bandwidth memory (HBM) amid expanding investments in AI infrastructure, Samsung Electronics is planning to relocate part of its back-end operations for legacy memory from its factories in Cheonan and Onyang, Chungcheongnam-do, South Korea, to Vietnam. This move aims to refocus its domestic back-end manufacturing capabilities on high-value-added products like HBM.

According to Korean media citing industry sources, although Samsung's initial HBM4 yield during mass production in February of this year briefly fell below 60%, its yield has recently approached 80%, which is about four months ahead of the original year-end target of 80%.

The company approved a total investment of approximately 54 trillion, 35.2 trillion won in Yongin “Y2” fab and 19.1 trillion won in the Cheongju “M17” fab, in a board meeting.

Samsung Electronics showcased its latest AI memory portfolio and technology roadmap at the 2026 Flash Memory Summit (FMS) in Santa Clara, unveiling the industry's first zHBM concept, zNAND‑O concept, and V10 BV‑NAND with over 400 layers, along with a suite of integrated solutions designed to advance future AI infrastructure.

SK hynix Inc. announced in collaboration with Sandisk that it has unveiled the first standard specifications for High Bandwidth Flash (HBF), a next-generation storage technology.

According to industry sources cited by media outlets, Samsung Foundry is ramping up efforts to hit its target of 100% capacity utilization in the second half of this year. Its current overall utilization rate stands at roughly 70%–80%. Given the existing order backlog and progress in contract negotiations, internal and external stakeholders are optimistic about achieving the goal, which is expected to reverse its prolonged run of operating losses.

During its Q2 2026 earnings call, Samsung Electronics stated that the AI computing boom is driving a rapid surge in server memory demand, and the supply-demand gap in the memory market is expected to widen further next year.

SK Hynix achieved record-high earnings in the second quarter of its fiscal year 2026. During the subsequent earnings call, the company stated that improvements in AI efficiency will expand industry demand, and AI infrastructure investment will remain robust in the long term. While short-term DRAM ASPs have been relatively weak due to product mix shifts, they are expected to improve in the second half of the year as HBM4 shipments ramp up. Currently, the iteration of new HBM products is progressing smoothly. The company is stabilizing the market through long-term agreements and maintaining steady and efficient capacity investments.

SK Group and NVIDIA have announced plans for a $500 billion plus comprehensive partnership to establish AI infrastructure serving the surging demand for global compute.

The companies expect the collaboration to be estimated at more than $200 billion across memory and foundry over the next five years through 2030.

According to South Korean media reports, Samsung Electronics plans to launch a dedicated solution for AI inference this August, integrating Processing-in-Memory (PIM) technology onto LPDDR5X memory.

According to media reports, Samsung Electronics held a special seminar at the "AMD Advancing AI 2026" event and announced the results of its collaboration with AMD. James Ahn, a senior engineer at Samsung, said that Samsung's HBM4 will be used in AMD's latest AI accelerators, the Instinct MI455X, and the Helios platform. Under the architecture, the Instinct GPU series uses HBM4 and HBM3E, the server CPU EPYC series uses RDIMM DRAM modules, and the Helios platform employs both RDIMM and HBM4. It is reported that the partnership between AMD and Samsung will be further strengthened in the next-generation product, HBM4E (7th-generation HBM).

According to South Korean media reports, Samsung Electronics has signed an MOU with Asan City in South Chungcheong Province, finalizing plans for the expansion of its Onyang plant. The new plant is scheduled to break ground in October of this year, with the goal of achieving mass production of HBM by May 2029. The project is reportedly the first of South Korea's three government-designated "Mega Projects" to materialize, with a total investment of 46 trillion won, of which 6 trillion won will be allocated to building the HBM production lines.

SK Hynix has increased its investment in the Cheongju P&T7 project to 7.0931 trillion won (approximately $4.8 billion) to proactively address the growing demand for AI memory.

According to South Korean media reports, Samsung Electronics is expanding its alliance with Nvidia into NAND flash supply. Industry sources indicated that Samsung Electronics has built V-NAND production capacity of more than 100,000 wafers per month, and is mass-producing its 10th-generation V10 product for supply to Nvidia. It is said that Samsung has allocated about 60% of its V-NAND production capacity to V9, which intended to meet the NAND demand for NVIDIA CMX in the second half of the year. In addition, trial production of the 500-layer-class V11 has begun earlier this year, and Samsung plans to double related volumes in the second half.