Currently, the monthly DRAM production capacity based on 12-inch wafers at SK Hynix’s Wuxi plant ranges from 180,000 to 190,000 units, with approximately 90% of this capacity now utilizing the 1a process. The output from the Wuxi plant accounts for 30% to 40% of SK Hynix’s total DRAM production.

SK Hynix announced on Jan. 13 that it has decided to make a new investment in the advanced packaging fab P&T7 to stably respond to global artificial intelligence (AI) memory demand and optimize production at the Cheongju fab.”

NVIDIA will establish a research and development (R&D) hub in Korea. This follows up on the commitment made by NVIDIA CEO Jensen Huang, who visited Korea in October last year and announced plans to supply over 260,000 high-performance AI semiconductors.

SK hynix Inc. announced that it will open a customer exhibition booth at Venetian Expo and showcase its next-generation AI memory solutions at CES 2026, in Las Vegas from January 6 to 9 (local time).

Netlist claims that Samsung Electronics’ core memory products, including High Bandwidth Memory (HBM) and DDR5, have infringed on its technology patents. The company has requested the ITC to issue exclusion orders and cease-and-desist orders to prevent the import of the allegedly infringing products into the United States.

South Korean Media: Samsung to Expand HBM Capacity by Nearly 50% Next Year, Focusing on HBM4

Sources: Samsung Pyeongtaek P4 Fab Construction Accelerated, HBM4 Mass Production Likely to Kick Off Earlier

Behind the $20 Billion Non-Exclusive Deal: NVIDIA Acquires Groq's Core Team to Reduce Reliance on HBM

SK Hynix Advances M15X HBM4 Fab to Feb Launch, Targets NVIDIA Rubin Orders

SK hynix to Deliver 12-Layer HBM4 Final Samples to NVIDIA in Early January 2026

On Dec. 4, SK Hynix announced that it has implemented organizational restructuring and executive appointments for 2026 and established Global AI Research Centers at major locations including the United States, China, and Japan.

According to industry sources on Dec. 1, Samsung Electronics’ HBM production volume has recently expanded to 170,000 wafers per month based on wafer input, surpassing SK Hynix’s 160,000 wafers. Samsung Electronics had previously maintained around 150,000 wafers per month.

Samsung Electronics has conducted an organizational restructuring, dissolving the High Bandwidth Memory (HBM) development team that was established last year and reorganizing it under the DRAM development division.

Samsung Electronics has announced the completion of its regular 2026 executive personnel adjustments, which included the promotion of 161 executives to positions such as EVP, VP, Fellow, and Master. This represents a significant increase compared to last year's 137 promotions.

Benefiting from the significantly improved price environment of the NAND and DRAM product lines in the third quarter, and in response to the strong new demand for server NAND and DRAM, the sales of high - value - added products such as server DDR5, LPDDR5X, HBM3E, and eSSD have been expanded.