Samsung Electronics has embarked on establishing a test line to improve the yield of its 7th generation (1d) DRAM, a Memory two generations ahead, at the 10nm (nanometer, one billionth of a meter) level.

Samsung Electronics has successfully completed the development of its groundbreaking 400-layer NAND technology at its Semiconductor Research Institute.

The CXL Consortium announces the release of its Compute Express Link (CXL) 3.2 Specification.

Executive vice president Ahn Hyun was promoted to president and the new post of chief development officer (CDO).

Samsung Electronics today announced new leadership for the next phase of the Company’s growth and to strengthen its future competitiveness, focusing on the semiconductor business.

Samsung Electronics is expected to supply its cutting-edge chips to the top graphics processing unit maker Nvidia soon, stepping closer to securing a footing in the lucrative AI chip market.

The company plans to begin delivering the 321-layer products to customers in the first half of next year.

TWSC UFS offers storage capacities of 128GB, 256GB, and 512GB, with a thickness as slim as 1.0mm, ensuring compatibility with compact mobile devices.

The HBM4 chip could also be used in Tesla’s AI data centers under development and its self-driving cars, which are currently fitted with HBM2E chips for pilot programs.

According to industry sources on Nov. 19, Samsung Electronics signed a contract in the third quarter to sell and purchase semiconductor equipment for the purpose of expanding production facilities at its Suzhou plant (SESS) in China. The contract is valued at approximately 20 billion won.

Solidigm said it is currently working with global customers on certification for the D5-P5336 and plans to start sales in the first quarter of next year.

The new facilities, expected to be completed by December 2027, will feature advanced packaging lines for HBM chips, which are in high demand due to their essential role in AI computing.

KIOXIA intends to change its business structure of "NAND only" by developing next-generation Memory. At present, other original storage manufacturers such as Samsung Electronics, SK Hynix, Micron, etc. have already laid out CXL.

Kwak also said that the company will push Gen 6 HBM, or HBM4, in 12 stacks and 16 stacks as their main products.

Samsung Electronics' R&D investment in the third quarter of 2024 was 8.87 trillion Korean won, an increase of 9.24% compared to the previous quarter. In terms of DRAM, Samsung Electronics plans to expand sales in the fourth quarter in conjunction with HBM production capacity, accelerate the transition of server DDR5 to 1nm, and actively increase the sales proportion of 32Gb DDR5 high-density products. In terms of NAND, we will expand sales of PCIe Gen5 based on the eighth generation (V8) and plan to mass produce QLC NAND 64TB products with high growth potential.