As the market gradually returns to normalcy after the holiday, some core channel customers, driven by continuously declining inventory levels, have begun to initiate stockpiling one after another. On the seller's side, Memory manufacturers, affected by the persistent shortage of channel resources and significantly increased costs, continue to control shipments even in the face of some demand, resulting in substantial price increases across the board for channel SSDs and DDR UDIMM this week.

On March 10th, SK Hynix announced the successful development of a 16Gb LPDDR6 DRAM Memory product based on its sixth-generation 10nm-class (1c) process. This product is precisely designed for smartphones, tablets, and other mobile devices, providing a crucial storage solution for edge AI applications.

Recently, Nvidia CEO Jensen Huang sent a clear signal to DRAM manufacturers at the Morgan Stanley Technology Conference. He stated that the chip supply shortage is "excellent news" for Nvidia, and bluntly told storage manufacturers, "We will use up whatever capacity is added."

YMTC has officially listed its first commercial PCIe 5.0 SSD, the PC550, on its website. According to the official information, PC550 is a PCIe 5.0 commercial consumer SSD specifically designed for AI PCs. It utilizes X4-9070 flash Memory chips and the four-channel solution. Compared to an eight-channel design, this approach reduces the SSD's power consumption and heat generation, with full-load power consumption below 6W and standby power consumption as low as 3mW. Therefore, it is more suitable for the thermal environment of laptops while also extending device battery life. PC550 is available in three capacity options: 512GB, 1TB, and 2TB. Its sequential read and write speeds reach up to 10,500MB/s and 10,000MB/s respectively, as well as random read and write speeds of up to 1300K IOPS (for the 1TB version).

The 2026 Chinese Government Work Report has released a series of policy signals related to digital infrastructure development, with several initiatives expected to directly benefit the storage industry.

Nanya Technology recently disclosed for the first time the progress of its customized AI Memory development. The company stated that it is collaborating with multiple logic IC manufacturers and ecosystem partners, and some products have entered the trial production stage. More concrete results are expected to emerge in the second half of this year.

According to reports, driven by the recent surge in Memory prices, Lenovo has issued a price adjustment notice to its channel distributors, deciding to raise prices for some of its computer products. Insiders revealed that this round of price adjustments mainly targets certain offline retail stores. Compared to last year, the retail prices of some computer models have increased by as much as over 1,000 yuan. However, the subsidy policy for student purchases remains in place, so prices for students have not yet been affected by this price hike. Against the backdrop of high volatility in the global Memory chip market, significant price increase risks are expected to persist over the next three to four quarters.

BIWIN Storage released its performance forecast, benefiting from booming Memory industry. According to preliminary calculations, the company expects to achieve operating revenue of RMB 4 billion to 4.5 billion from January to February 2026, representing a year-on-year increase of 340.00% to 395.00%. Net profit attributable to the parent company is projected to be RMB 1.5 billion to 1.8 billion, up 921.77% to 1086.13% year-on-year. Net profit attributable to the parent company after deducting non-recurring gains and losses is estimated to be RMB 1.35 billion to 1.6 billion, an increase of 836.65% to 973.07% year-on-year.

Micron recently became the first in the industry to sample a single 256GB SOCAMM2 Memory module, currently the world's highest-capacity low-power DRAM (LPDRAM) module for servers, designed specifically for AI data centers and high-performance computing applications.

Over the past six months, NAND Wafer spot prices have generally trended significantly higher. Compared to last October, the cumulative price increase for 1Tb QLC/TLC has exceeded threefold, with the unit price approaching $0.2/GB. The 512Gb TLC has recorded a nearly fivefold price surge, with the unit price already surpassing $0.3/GB.

At the MWC 2026, Yuan Yuan, President of Huawei's Data Storage Product Line, officially launched the AI Data Platform during the product and solution release event. The platform introduces the groundbreaking "3+1" architecture, designed to address three major bottlenecks in AI inference: hallucinations, poor response experience, and Memory loss.

The National Development and Reform Commission's (NDRC) Price Monitoring Center recently pointed out that since September 2025, the global Memory market gap has widened, and Memory chip prices have continued to rise rapidly. As of January this year, the average contract price of DRAM (DDR4 8Gb) reached US$11.5, an increase of 83% compared to September last year; the average price of NAND flash Memory (128Gb) reached US$9.5, an increase of nearly 1.5 times, both reaching new highs since 2016. The NDRC pointed out that the main reason for the price increase is the explosive demand for AI servers, with the Memory demand per unit reaching eight times that of traditional servers; at the same time, giants such as Samsung have shifted more than 80% of their advanced production capacity to high-bandwidth Memory, leading to a shortage of consumer-grade Memory supply; rising raw material prices and panic buying by downstream users have further pushed up prices.

Recently, Beijing University of Posts and Telecommunications, in collaboration with Hong Kong Polytechnic University and other institutions, experimentally verified the room-temperature intrinsic ferroelectricity of gallium oxide, an ultrawide bandgap semiconductor. The findings were published in Science Advances. Using MOCVD technology, the team successfully fabricated epitaxial κ-Ga₂O₃ thin films and observed stable ferroelectric switching, achieving devices with an on/off ratio exceeding 10⁵ and endurance over 10⁷ cycles. The finding resolves the long-standing conflict between the rigid structure required for wide bandgap semiconductors and the atomic flexibility needed for ferroelectricity, paving the way for integrating high-power and non-volatile Memory functions in a single material platform.

BIWIN Storage released its 2025 preliminary financial results, reporting operating revenue of 11.30 billion yuan in 2025, with a year-over-year increase of 68.72%. Net profit attributable to shareholders reached 867 million yuan, surging 437.56% from the previous year. Basic earnings per share were 1.90 yuan, compared to 0.37 yuan in the last year, representing growth of 413.51%.

It is reported that both Samsung’s DS division and Micron plan to significantly increase the price of LPDDR5X during negotiations following the launch of the initial products.