SK hynix has announced that the yield (ratio of good chips) of their fifth-generation High Bandwidth Memory (HBM) HBM3E is nearing 80%.

Samsung Electronics today announced that Young Hyun Jun was named as the new Head of Device Solutions (DS) Division to lead the Company’s semiconductor business and strengthen its competitiveness amid an uncertain global business environment.

On May 14, at a European technology symposium held in Amsterdam, the Netherlands, TSMC unveiled details about its sixth-generation HBM4 for the first time. TSMC disclosed that it is considering 12-nanometer (nm) and 5-nm processes for the production of logic dies that will be used in HBM4, effectively offering to customize and supply HBM4 based on client performance requirements.

SK Hynix is planning to start mass production of HBM4E in 2026, a company research said.

In an impressive display of economic resilience, the Korea Information and Communication Technology (ICT) industry recorded a growth rate in exports over 30% for the first time since March 2022 fueled by strong performances in key segments such as semiconductors.

?Samsung is taking a two-track approach to its development of high-bandwidth Memory (HBM).

SK hynix said that the ZUFS 4.0, optimized for on-device AI from mobile devices such as smartphones, is the industry’s best of its kind. The company expects the latest product to help expand its AI Memory leadership to the NAND space, extending its success in the high-performance DRAM represented by HBM.

Micron 128GB DDR5 RDIMM Memory is available now directly from Micron and will be available through select global channel distributors and resellers in June 2024.

SK hynix Inc. announced today that it recorded 12.43 trillion won in revenues, 2.886 trillion won in operating profit (with an operating margin of 23%), and 1.917 trillion won in net profit (with a net margin of 15%) in the first quarter.

Kioxia Corporation announced that it has begun sampling the latest generation of its Universal Flash Storage (UFS) Ver. 4.0 embedded flash Memory devices. Supported in capacities of 256 gigabytes (GB), 512GB, and 1 terabyte (TB), the new products are well suited for a variety of next-generation mobile applications, including leading-edge smartphones.

Samsung Electronics announced that it has developed the industry's first LPDDR5X DRAM supporting the industry's highest performance of up to 10.7 gigabits-per-second (Gbps). Leveraging 12 nanometer (nm)-class process technology, Samsung has achieved the smallest chip size among existing LPDDRs, solidifying its technological leadership in the low-power DRAM market.

Memory chips accounted for US$7.45 billion, with system chips accounting for US$3.8 billion, an increase of 63% and 4.6%, respectively, from last year.

The V9 NAND is a cutting-edge product that succeeds Samsung’s current flagship 236-layer V8 flash products, targeting large-scale enterprise servers and AI and cloud devices.

Samsung has begun sampling its HBM3E 12H to customers and mass production is slated for the first half of this year.

Micron Technology, Inc., announced two new Crucial Pro Series products with the addition of overclocking-capable Memory and the world's fastest Gen 5 SSD.