With a blend of speed and low power use, Kioxia’s UFS Ver. 4.1 devices are built to enhance user experiences—enabling faster downloads and smoother app performance.

According to Korean media reports, Samsung Electronics has recently completed quality testing of its 12-layer HBM3E products with Broadcom and is now negotiating mass production supply. The current discussions involve an estimated supply volume of approximately 1 billion gigabits (Gb), with mass production expected to begin as early as the second half of this year and extend into next year.

Samsung Electronics achieved a significant technological milestone by securing production readiness approval for its sixth-generation DRAM technology.

SK hynix Inc. plans to build a new semiconductor back-end process facility in central South Korea to enhance its chip-packaging capabilities, industry sources said Tuesday.

KIOXIA America, Inc. announced the development and prototype demonstration of its new KIOXIA CD9P Series PCIe 5.0 NVMe SSDs.

According to industry sources on July 19, Samsung Electronics achieved a 50-70% yield rate in performance tests of 10nm (nanometer) class 6th-generation DRAM wafers last month. This marks substantial progress compared to the less than 30% yield rate recorded for the same product last year.

In a recent interview, Micron's Executive Vice President and Chief Business Officer, Sumit Sadana, acknowledged that the phase?out comes at a time when demand for DDR4 remains unexpectedly strong. He noted that shortages of both DDR4 and LPDDR4 modules have driven spot-market prices to levels that, in some cases, exceed those of newer DDR5 products.

The HBM3E used in the MI350 series is believed to be Samsung’s 36GB 12-layer DRAM, completed last year. The chip vertically stacks 24Gb DRAM dies using through-silicon sia (TSV) technology, offering 36GB per package.

Micron plans to ramp HBM4 in calendar year 2026, aligned to the ramp of customers’ next-generation AI platforms.

The 4F2 VG platform is a next-generation Memory technology that minimizes the cell area of DRAM and enables high-integration, high-speed and low-power through a vertical gate structure.

Micron is currently sampling 1γ-based LPDDR5X 16 gigabyte (GB) products to select partners and will offer a wide range of capacities from 8GB to 32GB for use in 2026 flagship smartphones.

SK hynix plans to begin mass production of 12-layer HBM4 chips in the fourth quarter of 2025, supplying initial volumes to Nvidia once Rubin’s launch timeline and order size are confirmed.

SK hynix Inc. announced that it has developed UFS 4.1 solution product adopting the world’s highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications.

Chip giant SK hynix has reported that its U.S. sales accounted for over 70 percent of its total revenue in the first quarter on rising demand for premium high bandwidth Memory (HBM) chips from major U.S. tech companies.

During its first-quarter earnings call with analysts, Kim Jae-joon, executive vice president of Samsung’s Memory business, said the company is already collaborating with multiple customers on custom versions based on both HBM4 and the enhanced HBM4E.