On Dec. 4, SK Hynix announced that it has implemented organizational restructuring and executive appointments for 2026 and established Global AI Research Centers at major locations including the United States, China, and Japan.

According to industry sources on Dec. 1, Samsung Electronics’ HBM production volume has recently expanded to 170,000 wafers per month based on wafer input, surpassing SK Hynix’s 160,000 wafers. Samsung Electronics had previously maintained around 150,000 wafers per month.

Samsung Electronics has conducted an organizational restructuring, dissolving the High Bandwidth Memory (HBM) development team that was established last year and reorganizing it under the DRAM development division.

Samsung Electronics has announced the completion of its regular 2026 executive personnel adjustments, which included the promotion of 161 executives to positions such as EVP, VP, Fellow, and Master. This represents a significant increase compared to last year's 137 promotions.

Benefiting from the significantly improved price environment of the NAND and DRAM product lines in the third quarter, and in response to the strong new demand for server NAND and DRAM, the sales of high - value - added products such as server DDR5, LPDDR5X, HBM3E, and eSSD have been expanded.

The PM9E1 is Samsung Electronics’ industry-leading PC SSD in terms of performance and capacity, with sequential read and write speeds of up to 14.5 gigabytes (GB) per second.

Driven by supply control at the resource end and trade speculation, the spot prices of 512Gb/1Tb Flash Wafers have been rising continuously for nearly two months, with a cumulative increase of over 20%.

Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.

Kioxia is working with Nvidia to build extremely fast AI SSDs to augment high-bandwidth memory (HBM) by being directly connected to GPUs, with 2027 availability.

The abandonment of SOCAMM1, if accurate, resets what was expected to be a fast-tracked rollout of modular LPDDR-based memory in Nvidia’s data center stack. SOCAMM has been positioned as a new class of high-bandwidth, low-power memory for AI servers, delivering similar benefits to HBM but at a lower cost.

Samsung Electronics aims to expand HBM supply with the P5 groundbreaking.

The global DRAM market size in the second quarter of 2025 increased by 20% quarter-on-quarter to $32.101 billion, marking a new historical quarterly high.

SK Hynix expects this market for custom HBM to grow to tens of billions of dollars by 2030, Choi said.

Sandisk Corporation announced it has signed a landmark Memorandum of Understanding (MOU) with SK hynix to work together to establish the specification for High Bandwidth Flash – a new technology designed to deliver breakthrough memory capacity and performance for the next generation of AI inferences. Through this collaboration, the companies expect to standardize the specification, define technology requirements and explore the creation of a technology ecosystem for High Bandwidth Flash.

Both revenues and operating profits stood at all-time highs, beating the previous best results in the fourth quarter of last year.