Sources: Samsung Pyeongtaek P4 Fab Construction Accelerated, HBM4 Mass Production Likely to Kick Off Earlier

According to South Korean media reports, the construction project of Samsung Electronics' Pyeongtaek P4 fab is being accelerated, with the target timeline for its equipment installation and commissioning moved up by 2 to 3 months from the original schedule.

This fab will serve as the core production base for Samsung’s 10nm 6th-generation (1c) DRAM, and Samsung is the first to adopt 1c DRAM for its 6th-gen HBM (HBM4) chips. Recent reports revealed that Samsung Electronics achieved the best performance among all memory manufacturers in terms of operating speed and energy efficiency in the HBM4 performance tests for NVIDIA’s Vera Rubin AI accelerator.

In addition, Samsung’s Pyeongtaek P5 fab is currently implementing a fast-track strategy, under which structural framing construction, equipment ordering and installation are carried out simultaneously to expedite mass production. Samsung recently approved the start of structural construction for this production line via its internal decision-making body, with an original target to commence operations in 2028. However, against the backdrop of a severe shortage of memory semiconductors -- a situation expected to worsen further starting next year -- the industry speculates that the commissioning date of Samsung’s P5 fab may be brought forward.