Winbond Electronics has launched a new 8Gb DDR4 DRAM utilizing its proprietary 16nm process technology

Despite the growing adoption of DDR5, many industries continue to rely on the stable and mature ecosystem of DDR4. Leveraging the advanced 16nm process, Winbond's new DDR4 product achieves significant performance improvements. Compared to previous generation technologies, the 16nm process node features a smaller die size, higher wafer yield, and better power efficiency, allowing customers to integrate higher DRAM capacity without increasing package size. Process optimizations have also enhanced signal integrity and reduced leakage rates, ensuring stable operation at data rates up to 3600Mbps. The combination of high speed, low cost, and high process maturity makes Winbond's 16nm DDR4 an ideal choice for industrial and embedded applications with long product life cycles.

Based on the 16nm process node, Winbond is currently developing three additional products under the same platform, including CUBE, 8Gb LPDDR4, and 16Gb DDR4, to further expand its next-generation memory product portfolio.