Samsung Electronics Reportedly Also Developing Next-Generation 4F² VCT DRAM

According to South Korean media reports, at the opening ceremony of the 28th Semiconductor Exhibition (SEDEX 2026) held at COEX in Gangnam District, Seoul, Samsung Electronics CTO and President, Song Jaehyuk, confirmed that Samsung Electronics is also developing 4F² technology. Samsung Electronics stated that it has been researching 4F² technology for about five years and is internally advancing it in the form of "Vertical Channel Transistor (VCT) DRAM," in which the cell structure is arranged vertically. According to industry sources, Samsung Electronics plans to apply 4F² technology to its next-generation 3D DRAM and vertical structure process node "D0a," with the project internally codenamed "D0a-V."