Kioxia announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications and high-capacity storage needs, the new devices are powered by Kioxia’s 8th generation BiCS FLASH™ 3D flash memory technology.Available in 512-gigabyte (GB) and 1-terabyte (TB) capacities, the new UFS 4.1 devices combine Kioxia’s advanced BiCS FLASH™ 3D flash memory and an integrated controller in a JEDEC-standard package.