Kioxia to Commence Production of 332-Layer NAND Flash in 2026

According to Japanese media reports, in a bid to capture demand from AI data centers, Kioxia plans to begin production of its 10th-generation NAND Flash in 2026 at its Kitakami Plant in Iwate Prefecture. Compared with the current 8th-generation 218-layer technology, the new generation will feature 332 layers, increasing storage capacity per unit area by 59% while improving data transfer speed by 33% and reducing power consumption. The report states that Kioxia will not build a new plant but will utilize the second building (K2) of the Kitakami Plant, which started operations in September this year, for the production of the 10th-generation NAND Flash.