Micron Reportedly Begins Development of Vertically Stacked GDDR, Samples Expected to Debut in 2027

According to Korean media reports, Micron has launched a new R&D initiative aimed at developing a GDDR memory product with the vertically stacked structure. By leveraging a vertical stacking technology similar to HBM, this innovation is expected to significantly enhance the performance and capacity of traditional graphics memory. This novel design could pave a new technological path between standard GDDR and high-end HBM, addressing the growing market demand for high-performance, cost-effective memory solutions. It is reported that Micron plans to complete the installation of relevant equipment and enter the process testing phase in the second half of this year. The currently proposed solution involves vertically stacking four layers of GDDR chips. If development proceeds smoothly, the first test samples could be unveiled as early as 2027.