Samsung Electronics' 1c DRAM Yield Reportedly Close to 60%

According to South Korean media reports, informed sources within Samsung Electronics revealed that the yield of Samsung Electronics' 1c DRAM has recently approached 60%. This yield level ensures profitability by exceeding the break-even point.

Previously, during the 1c DRAM development process, after securing a certain level of yield, Samsung Electronics dissolved the task force dedicated to yield improvement as planned in December 2025. The team, comprising approximately 400-500 personnel, was dispersed and reassigned to the Pyeongtaek production line and existing technology organizations.

Samsung's decision-making benchmark was a "cold test yield of 50%." Even if the yield could not be improved immediately, the management made the decisive judgment that it was imperative to swiftly enter NVIDIA's supply chain and preemptively secure market share.

The industry interprets this 1c DRAM mass production strategy as Samsung Electronics' "return to prioritizing speed." It is viewed as a shift from its previous stance of "emphasizing yield stabilization and being cautious about mass production conversion" back to the classic Samsung model of "immediately proceeding with mass production and market response once a certain yield level is secured." It is reported that internally, Samsung Electronics shares the view that it is ahead of competitors in 1c DRAM mass production.

Samsung Electronics applies 1c DRAM and logic dies based on a 4-nanometer process in its HBM4, enhancing power efficiency and operating speed. Analysis indicates that internal technical evaluations have confirmed performance levels exceeding 11 Gbps per second, nearing the high-speed specifications required by NVIDIA.

Samsung Electronics forecasts that its HBM sales in 2026 will increase by more than 2.5 times compared to 2025. This is interpreted as expressing expectations for the formalization of HBM4 mass production expansion, based on 1c DRAM yield improvements and production ramp-up.

Previously, it was reported that Samsung Electronics plans to increase its 1c DRAM production capacity to 200,000 wafers per month by the end of 2026.

Separately, industry sources revealed that NVIDIA once again raised its supply standards for HBM4 chips to Samsung Electronics and SK Hynix in the fourth quarter of 2025. In response, Samsung Electronics is revising its logic chip design and collaborating with its foundry division, focusing on thermal management and performance enhancement to accelerate R&D progress.