Samsung Electronics Unveils V10 BV-NAND with Over 400 Layers and I/O Speeds Exceeding 4.8 Gbps

V10 is Samsung's latest 3D NAND flash memory, developed to meet the growing demand for high-performance, high-capacity, and power-efficient storage in the AI era.

Deconstructing V10 BV-NAND Technology

Samsung's advanced 3-stack HARC (High Aspect Ratio) Merge technology enabled a V-NAND architecture with more than 400 word lines. Based on Samsung's 3D Bonded-VNAND architecture, V10 features more than 400WL. By combining HARC Merge technology with Multi Hole and Zero Dummy Hole technologies, V10 has achieved a 58% improvement in bit density over the previous generation while enhancing manufacturing efficiency and overall product quality.

Another major innovation was Wafer Bonding technology. Samsung developed a process that separately fabricates the cell and peripheral (Peri) circuits on two wafers and then bonds them together, which maximized the performance of the Peri devices and leverage their enhanced characteristics through circuit design to deliver both high performance and low power consumption.

The 3D Bonded-VNAND architecture plays an important role not only in increasing density but also in improving I/O performance. By enabling low-temperature processing, we were able to scale the peripheral circuits, improve transistor characteristics, and enhance I/O performance. Samsung’s proprietary Pin-ODT technology enhances SCA (Separate Command and Address) operation, improving I/O efficiency by more than 75%.

In addition, technologies such as DFE (Decision-Feedback Equalizer) and RDCA (Read-Duty-Cycle Adjustment) have been applied to mitigate ISI (Inter-Symbol Interference), which can occur during high-speed data transmission.

Together, these technologies enabled V10 to achieve I/O speeds of more than 4.8Gbps, providing the foundation to support the high I/O performance required by next-generation high-performance SSDs.

By combining several low-power technologies, V10 is able to reduce power consumption by more than 25% compared to the previous generation. 

AI Storage Base: From 128TB to PCIe Gen7

V10's technological innovations go beyond improving the performance of NAND itself. Their significance lies in delivering tangible customer value by simultaneously improving the capacity, performance, and power efficiency required by AI infrastructure.

With its high bit density, V10 can support ultra-high-capacity 128TB SSDs, while its I/O performance of more than 4.8Gbps supports next-generation PCIe Gen7 SSDs. At the same time, improved power efficiency can help reduce power consumption and TCO in large-scale AI data centers.