SK Hynix's DRAM production at its Wuxi plant has been upgraded to the 1a process

According to industry sources cited by the Korean media outlet etnews, SK Hynix has upgraded its existing 1z process at its Wuxi plant to the 1a process.

Currently, the monthly DRAM production capacity based on 12-inch wafers at SK Hynix’s Wuxi plant ranges from 180,000 to 190,000 units, with approximately 90% of this capacity now utilizing the 1a process. The output from the Wuxi plant accounts for 30% to 40% of SK Hynix’s total DRAM production.

The 1a DRAM process requires the use of extreme ultraviolet (EUV) lithography technology. Due to export restrictions, EUV equipment cannot be imported into China. As an alternative, SK Hynix has adopted a method where the fine circuit fabrication steps requiring EUV are completed in South Korea, while the remaining processes are carried out in Wuxi. Despite the complexity of the process and higher logistics costs, the transition of the Wuxi plant to the 1a process production line is seen as a demonstration of its critical importance.

Meanwhile, SK Hynix is expected to accelerate the upgrade of its DRAM wafer fabs in South Korea to the 1c process. The investment for the 1c upgrade will focus on the M14 and M16 wafer fabs located in Icheon. Its future production structure will involve manufacturing general-purpose DRAM products in China, while cutting-edge DRAM products will be produced in South Korea.

In other news, Sungsoo Ryu, CEO of SK Hynix America, recently revealed in an interview with Reuters that SK Hynix will open the first plant at its new Yongin campus in South Korea three months ahead of schedule, in February 2027. Additionally, the company plans to start loading silicon wafers into the newly built M15X plant in Cheongju from next month, officially commencing the production of HBM chips.